Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

被引：0

作者：

Chen, Lan-li ^{[1
]}

Wang, Sheng-zhao ^{[1
]}

Yin, Ying-peng ^{[1
]}

Shi, Ming-ji ^{[1
]}

机构：

[1] Nanyang Inst Technol, Dept Elect, Nanyang 473006, Henan, Peoples R China

来源：

LIQUID CRYSTALS AND RELATED MATERIALS II | 2012年 / 181-182卷

关键词：

Plasma enhanced chemical vapor deposition (PECVD); Substrate temperature; Silicon thin film;

D O I：

10.4028/www.scientific.net/SSP.181-182.401

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 degrees C. On this work, optimal mu c-Si:H can be obtained at 400 degrees C deposition temperature in the suitable experimental conditions.

引用

页码：401 / 404

页数：4

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