Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition

被引：0
|
作者：
Chen, Lan-li [1 ]
Wang, Sheng-zhao [1 ]
Yin, Ying-peng [1 ]
Shi, Ming-ji [1 ]
机构：
[1] Nanyang Inst Technol, Dept Elect, Nanyang 473006, Henan, Peoples R China
来源：
LIQUID CRYSTALS AND RELATED MATERIALS II | 2012年 / 181-182卷
关键词：
Plasma enhanced chemical vapor deposition (PECVD); Substrate temperature; Silicon thin film;
D O I：
10.4028/www.scientific.net/SSP.181-182.401
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The influence of deposition temperature (Ts) on glass/stainless steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at different temperature was investigated by PECVD technology. The crystallization ratio and grain size of the silicon thin film at different deposition temperature is studied. The results reveal that the crystallization ratio and grain size of silicon thin film changed along with Ts. The crystallization ratio and grain size of the silicon thin film become larger when Ts=400 degrees C. On this work, optimal mu c-Si:H can be obtained at 400 degrees C deposition temperature in the suitable experimental conditions.
引用
收藏
页码：401 / 404
页数：4
相关论文
共 50 条
  • [21] High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition
    Guo, LH
    Kondo, M
    Fukawa, M
    Saitoh, K
    Matsuda, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A): : L1116 - L1118
  • [22] Investigation of Deposition Parameter Effects on Energy Bandgap of Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition via Factorial Experiment
    Zhao, Lei
    Zhao, Bending
    Yan, Baojun
    Diao, Hongwei
    Wang, Wenjing
    ADVANCED MATERIALS RESEARCH II, PTS 1 AND 2, 2012, 463-464 : 592 - 596
  • [23] Photovoltaic application of nanomorph silicon thin films prepared by plasma enhanced chemical vapor deposition
    Hazra, S
    Ray, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (5A): : L495 - L497
  • [24] Photovoltaic Application of Nanomorph Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition
    Hazra, Sukti
    Ray, Swati
    Japanese Journal of Applied Physics, Part 2: Letters, 1999, 38 (5 PART 2): : 495 - 497
  • [25] Low temperature silicon dioxide film deposition by remote plasma enhanced chemical vapor deposition: growth mechanism
    Park, YB
    Rhee, SW
    SURFACE & COATINGS TECHNOLOGY, 2004, 179 (2-3): : 229 - 236
  • [26] DEPOSITION OF TRANSPARENT SiOXNY THIN FILM ON PET BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION
    Shahpanah, Marjan
    Firouzjah, Marzieh Abbasi
    Mehdikia, Hamed
    Shokri, Babak
    2015 42ND IEEE INTERNATIONAL CONFERENCE ON PLASMA SCIENCES (ICOPS), 2015,
  • [27] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors
    Hiramatsu, Masato
    Kimura, Yoshinobu
    Jyumonji, Masayuki
    Nishitani, Mikihiko
    Matsumura, Masakiyo
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (6 A): : 3813 - 3816
  • [28] Deposition of pure hydrogenated amorphous silicon by plasma-enhanced chemical vapor deposition for polycrystalline silicon thin film transistors
    Hiramatsu, M
    Kimura, Y
    Jyumonji, M
    Nishitani, M
    Matsumura, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (6A): : 3813 - 3816
  • [29] The influence of deposition temperature on the structure of microcrystalline silicon film
    Chen Yong-Sheng
    Gao Xiao-Yong
    Yang Shi-E
    Lu Jing-Xiao
    Gu Jing-Hua
    ACTA PHYSICA SINICA, 2007, 56 (07) : 4122 - 4126
  • [30] Influence of deposition temperature on the structure of microcrystalline silicon film
    Key Laboratory of Material Physics, Department of Physics, Zhengzhou University, Zhengzhou 450052, China
    Wuli Xuebao, 2007, 7 (4122-4126):
12345