Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane

被引：50
|
作者：
Platz, R [1 ]
Wagner, S [1 ]
机构：
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.122138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Microcrystalline silicon (mu c-Si:H) of truly intrinsic character can be deposited by plasma-enhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added. A dark conductivity of 1.6 x 10(-8) S/cm and an activation energy of 0.62 eV are obtained. No special gas purification or microdoping is required. SiH2Cl2 in small amounts has the additional effect of enhancing the crystallinity and reducing the oxygen incorporation by over a factor of 2. Sub-band-gap absorption spectroscopy indicates a low defect density. (C) 1998 American Institute of Physics. [S0003-6951(98)01935-4].
引用
收藏
页码：1236 / 1238
页数：3
相关论文
共 50 条
  • [1] High-density microwave plasma-enhanced chemical vapor deposition of microcrystalline silicon from dichlorosilane
    Ohse, Naoyuki
    Hamada, Kazu
    Saha, Jhantu Kumar
    Kobayashi, Tomohiro
    Takemura, Yu-ichiro
    Shirai, Hajime
    [J]. THIN SOLID FILMS, 2008, 516 (19) : 6585 - 6591
  • [2] Plasma-enhanced chemical vapor deposition of intrinsic microcrystalline silicon from chlorine-containing source gas
    Platz, R
    Wagner, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (06): : 3218 - 3222
  • [3] Initial stage of microcrystalline silicon growth by plasma-enhanced chemical vapor deposition
    Arai, T.
    Nakamura, T.
    Shirai, H.
    [J]. Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (9 B):
  • [4] Formation of microcrystalline silicon film by using plasma-enhanced chemical vapor deposition
    Lee, JY
    Yoon, JH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (02) : 423 - 426
  • [5] Initial stage of microcrystalline silicon growth by plasma-enhanced chemical vapor deposition
    Arai, T
    Nakamura, T
    Shirai, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (9B): : L1161 - L1164
  • [6] High rate deposition of microcrystalline silicon using conventional plasma-enhanced chemical vapor deposition
    Guo, LH
    Kondo, M
    Fukawa, M
    Saitoh, K
    Matsuda, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A): : L1116 - L1118
  • [7] Substrate dependence of initial growth of microcrystalline silicon in plasma-enhanced chemical vapor deposition
    Kondo, M
    Toyoshima, Y
    Matsuda, A
    Ikuta, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 80 (10) : 6061 - 6063
  • [8] Polymorphous silicon thin films obtained by plasma-enhanced chemical vapor deposition using dichlorosilane as silicon precursor
    Remolina, A.
    Monroy, B. M.
    Garcia-Sanchez, M. F.
    Ponce, A.
    Bizarro, M.
    Alonso, J. C.
    Ortiz, A.
    Santana, G.
    [J]. NANOTECHNOLOGY, 2009, 20 (24)
  • [9] Microcrystalline silicon by plasma enhanced chemical vapor deposition from silicon tetrafluoride
    Cicala, G
    Capezzuto, P
    Bruno, G
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (02): : 515 - 523
  • [10] Complete parameterization of the dielectric function of microcrystalline silicon fabricated by plasma-enhanced chemical vapor deposition
    Yuguchi, Tetsuya
    Kanie, Yosuke
    Matsuki, Nobuyuki
    Fujiwara, Hiroyuki
    [J]. Journal of Applied Physics, 2012, 111 (08):
12345