Formation of microcrystalline silicon film by using plasma-enhanced chemical vapor deposition

Hydrogenated microcrystalline silicon (muc-Si:H) films were grown in the presence of an electric field by using plasma-enhanced chemical vapor deposition with a high hydrogen (H-2) and argon (Ar) dilution of silane. The crystalline phase in the films was observed to be markedly suppressed in the presence of an electric field. In particular, the suppression of the crystalline phase was dominant in the films grown near the anode side. For the anode-side films grown with an electric field of E = 80 V/cm and a hydrogen dilution ratio of R-H = 49, R-H = [H-2]/[SiH4], and an argon dilution ratio of R-A = 49, R-A = [Ar]/[SiH4], which usually resulted in microcrystalline silicon films, little or no crystalline volume fraction was observed. Moreover, this suppression of the crystalline phase is nearly independent of electric-field strength. Possible mechanisms for the formation of muc-Si:H films will be discussed.