Shallow Si/Pd-based ohmic contacts to n type Al0.5In0.5P and Ga0.5In0.5P

被引：0
|
作者：
Hao, PJ [1 ]
Wang, LC [1 ]
Chang, JCP [1 ]
Kuo, JM [1 ]
机构：
[1] TEXAS A&M UNIV,COLLEGE STN,TX 77843
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：346 / 349
页数：4
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