Cooling Process of Hot Excitons in Ordered Ga0.5In0.5P

被引：1
|
作者：
Kita, T. [1 ]
Sakurai, M. [1 ]
Yamashita, K. [1 ]
Nishino, T. [1 ]
Geng, C. [2 ]
Scholz, F. [2 ]
Schweizer, H. [2 ]
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期
关键词：
long-range ordering; GainP; exciton;
D O I：
10.7567/JJAPS.39S1.328
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved photoluminescence (PL) spectroscopy has been performed to investigate hot-exciton relaxation process in long-range ordered Ga0.5In0.5P. The cooling process of excitons shows strong order parameter dependence. The rise time of the exciton PL is getting faster with increasing degree of ordering. This indicates that optically created excitons rapidly relax in a fluctuated potential of the partially ordered epitaxial film. The exciton-PL lifetime becomes small with increasing order parameter. Also, the PL of ordered Ga0.5In0.5P exhibits a localized exciton feature with an much slower decay. These findings suggest that excitons tend to localize in ordered domain structure and can relax into localized deep centers via the nonradiative recombination pass in the ordered domain ensemble.
引用
收藏
页码：328 / 329
页数：2
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