THE NEAR-INFRARED PHOTOLUMINESCENCE OF EPITAXIAL GA0.5IN0.5P

被引：3
|
作者：
LIANG, JC [1 ]
ZHAO, JL [1 ]
GAO, Y [1 ]
机构：
[1] CHINESE ACAD SCI,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA
来源：
JOURNAL OF LUMINESCENCE | 1995年 / 63卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/0022-2313(94)00055-H
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The 1.17, 0.99 and 0.85 eV photoluminescence emission in Ga0.5In0.5P epilayers grown on GaAs substrates by metal-organic chemical vapor deposition have been observed. Only the 1.17 eV emission depends on the ordered structure of Ga0.5In0.5P. A detailed study of the 1.17 eV emission has been made at various temperatures and excitation intensities. The 1.17 eV emission is interpreted as arising from the recombination of the donor-acceptor pair (DAP), composed of a silicon donor on the gallium sublattice site and a gallium vacancy acceptor as the nearest neighbor. The relationship between the ordered structure and the recombination energy of DAP is examined and a new energy equation for DAP transition is deduced.
引用
收藏
页码：41 / 46
页数：6
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