PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：16
|
作者：
DONG, JR
WANG, ZG
LIU, XL
LU, DC
WANG, D
WANG, XH
机构：
[1] Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 11期
关键词：
D O I：
10.1063/1.114943
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by metalorganic vapor phase epitaxy are investigated by photoluminescence (PL) in a temperature range of 10-200 K using excitation power densities between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decreases first, then increases and finally goes down again with increasing temperature. A model of ordered Ga0.5In0.5P epitaxial layers is proposed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type-II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.
引用
收藏
页码：1573 / 1575
页数：3
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