ELECTROREFLECTANCE STUDY OF ORDERED GA0.5IN0.5P ALLOYS GROWN ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：57

作者：

NISHINO, T

INOUE, Y

HAMAKAWA, Y

KONDOW, M

MINAGAWA, S

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.99864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：583 / 585

页数：3

共 50 条

[1] HIGH-PRESSURE PHOTOLUMINESCENCE STUDY OF ORDERED GA0.5IN0.5P ALLOYS GROWN ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
KOBAYASHI, T
DEOL, RS
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1289 - 1291
[2] GA0.5IN0.5P/GAAS INTERFACES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BOUR, DP
SHEALY, JR
MCKERNAN, S
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (04) : 1241 - 1243
[3] PRESSURE-DEPENDENCE OF PHOTOLUMINESCENCE IN ORDERED GA0.5IN0.5P GROWN ON (001) GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
KOBAYASHI, T
OHTSUJI, M
DEOL, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2752 - 2759
[4] PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
DONG, JR
WANG, ZG
LIU, XL
LU, DC
WANG, D
WANG, XH
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1573 - 1575
[5] Pressure dependence of photoluminescence in ordered Ga0.5In0.5P grown on (001) GaAs by organometallic vapor phase epitaxy
Kobayashi, Toshihiko
Ohtsuji, Michiya
Deol, Rajpal S.
[J]. Journal of Applied Physics, 1993, 74 (04): : 2752 - 2759
[6] DOPING STUDIES OF GA0.5IN0.5P ORGANOMETALLIC VAPOR-PHASE EPITAXY
HSU, CC
YUAN, JS
COHEN, RM
STRINGFELLOW, GB
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 395 - 398
[7] ELECTROREFLECTANCE OF ORDERED GA0.5IN0.5P ALLOYS
NISHINO, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) : 44 - 52
[8] ORDERED STRUCTURES IN GAAS0.5SB0.5 ALLOYS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
JEN, HR
CHERNG, MJ
STRINGFELLOW, GB
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1603 - 1605
[9] INFLUENCE OF GROWTH TEMPERATURE ON CRYSTALLINE-STRUCTURE IN GA0.5IN0.5P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
INOUE, Y
NISHINO, T
HAMAKAWA, Y
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (21) : 2053 - 2055
[10] HEAVY DOPING OF SILICON INTO GA0.5IN0.5P AT LOW-TEMPERATURES IN ORGANOMETALLIC VAPOR-PHASE EPITAXY
MINAGAWA, S
ISHITANI, Y
TANAKA, T
KAWANAKA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 152 (04) : 251 - 255

← 1 2 3 4 5 →