Dominant noise source of low-frequency fluctuation in AlGaAs/InGaAs high electron mobility transistors

被引：3

作者：

Nishiyama, S ^{[1
]}

Higuchi, K ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

low-frequency noise; AlGaAs/InGaAs HEMT; Hooge relation;

D O I：

10.1143/JJAP.42.2296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an equivalent circuit model for the low-frequency noise (LFN) in high electron mobility transistors (HEMTs). Our model correctly describes-the dependence of LFN on gate voltage under low-drain-voltage conditions. Our model also allows us to investigate the location of the noise sources in HEMTs and leads to the fact that LFN arising from the extrinsic region is not negligible but dominant at a higher gate voltage.

引用

页码：2296 / 2299

页数：4

共 50 条

[21] Low-frequency noise in n-GaN with high electron mobility
Levinshtein, ME
Rumyantsev, SL
Look, DC
Molnar, RJ
Khan, MA
Simin, G
Adivarahan, V
Shur, MS
JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 5075 - 5078
[22] Extended radio frequency nonlinear model for power prediction of AlGaAs/InGaAs pseudomorphic high electron mobility transistors
Lin, CK
Chan, YJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (03): : 1048 - 1051
[23] Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors
Rao, Hemant
Bosman, Gijs
Journal of Applied Physics, 2009, 106 (10):
[24] Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors
Rao, Hemant
Bosman, Gijs
JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[25] Ultra-low noise high electron mobility transistors for high-impedance and low-frequency deep cryogenic readout electronics
Dong, Q.
Liang, Y. X.
Ferry, D.
Cavanna, A.
Gennser, U.
Couraud, L.
Jin, Y.
APPLIED PHYSICS LETTERS, 2014, 105 (01)
[26] Insight into low frequency noise induced by gate leakage current in AlGaAs/GaAs high electron mobility transistors at 4.2 K
Liang, Y. X.
Dong, Q.
Cheng, M. C.
Gennser, U.
Cavanna, A.
Jin, Y.
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[27] Comparison of InGaP/InGaAs/GaAs and InGaPtInGaAs/AlGaAs pseudomorphic high electron mobility transistors
Huang, CE
Lee, CP
Huang, RT
Chang, MCF
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (12): : 6761 - 6763
[28] High frequency drain noise in InAlAs/InGaAs/InP high electron mobility transistors in impact ionization regime
Wang, Hong
Liu, Yuwei
Radhakrishnan, K.
Ng, Geok Ing
2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, : 36 - +
[29] Electrical parameters and low-frequency noise of AlGaN/GaN high-electron mobility transistors with different channel orientation
de Andrade, Maria Gloria Cano
Nogueira, Carlos Roberto
Graciano Junior, Nilton
Doria, Rodrigo T.
Trevisoli, Renan
Simoen, Eddy
SOLID-STATE ELECTRONICS, 2024, 211
[30] Characterization of ultrahigh-speed pseudomorphic InGaAs/AlGaAs inverted high electron mobility transistors
Fujishiro, Hiroki Inomata
Tsuji, Hiromi
Nishi, Seiji
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (5 A): : 1272 - 1279

← 1 2 3 4 5 →