Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors

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作者：
Rao, Hemant [1 ]
Bosman, Gijs [1 ]
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[1] Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 10期
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