Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistors

被引：0
|
作者：
Rao, Hemant [1 ]
Bosman, Gijs [1 ]
机构：
[1] Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, United States
来源：
Journal of Applied Physics | 2009年 / 106卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Fabrication and characterization of V-gate AlGaN/GaN high-electron-mobility transistors
    Zhang Kai
    Cao Meng-Yi
    Chen Yong-He
    Yang Li-Yuan
    Wang Chong
    Ma Xiao-Hua
    Hao Yue
    CHINESE PHYSICS B, 2013, 22 (05)
  • [22] Transformation in Low-Frequency Noise Spectra in GaN High-Electron-Mobility Transistors in Nonequilibrium Conditions
    Petrychuk, Mykhailo
    Vitusevich, Svetlana
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (02):
  • [23] Low-frequency noise in AlGaN/GaN heterostructure field effect transistors
    Kuksenkov, DV
    Temkin, H
    Gaska, R
    Yang, JW
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (07) : 222 - 224
  • [24] Low-frequency noise in n-GaN with high electron mobility
    Levinshtein, ME
    Rumyantsev, SL
    Look, DC
    Molnar, RJ
    Khan, MA
    Simin, G
    Adivarahan, V
    Shur, MS
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) : 5075 - 5078
  • [25] Influence of surface passivation on low-frequency noise properties of AlGaN/GaN high electron mobility transistor structures
    Vitusevich, SA
    Petrychuk, MV
    Danylyuk, SV
    Kurakin, AM
    Klein, N
    Belyaev, AE
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (05): : 816 - 819
  • [26] Defect Characterization in High-Electron-Mobility Transistors with Regrown p-GaN Gate by Low-Frequency Noise and Deep-Level Transient Spectroscopy
    Hsu, Po-Chun
    Simoen, Eddy
    Liang, Hu
    De Jaeger, Brice
    Bakeroot, Benoit
    Wellekens, Dirk
    Decoutere, Stefaan
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2021, 218 (23):
  • [27] Effect of AlGaN barrier thickness on the noise of AlGaN/GaN High electron mobility transistors
    Yahyazadeh, R.
    Hashempour, Z.
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 67 - 73
  • [28] Device reliability study of AlGaN/GaN high electron mobility transistors under high gate and channel electric fields via low frequency noise spectroscopy
    Rao, Hemant
    Bosman, Gijs
    MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) : 1528 - 1531
  • [29] Controlled gate surface processing of AlGaN/GaN high electron mobility transistors
    Walker, Dennis E., Jr.
    Fitch, Robert C., Jr.
    Gillespie, James K.
    Jessen, Gregg H.
    Cassity, Paul D.
    Breedlove, Joseph R.
    Brillson, Leonard J.
    APPLIED PHYSICS LETTERS, 2006, 89 (18)
  • [30] AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate
    Li, Y.
    Ng, G. I.
    Arulkumaran, S.
    Liu, Z. H.
    Ranjan, K.
    Xing, W. C.
    Ang, K. S.
    Murmu, P. P.
    Kennedy, J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (03):
12345