Dominant noise source of low-frequency fluctuation in AlGaAs/InGaAs high electron mobility transistors

被引：3

作者：

Nishiyama, S ^{[1
]}

Higuchi, K ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Higashihiroshima 7398526, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 4B期

关键词：

low-frequency noise; AlGaAs/InGaAs HEMT; Hooge relation;

D O I：

10.1143/JJAP.42.2296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an equivalent circuit model for the low-frequency noise (LFN) in high electron mobility transistors (HEMTs). Our model correctly describes-the dependence of LFN on gate voltage under low-drain-voltage conditions. Our model also allows us to investigate the location of the noise sources in HEMTs and leads to the fact that LFN arising from the extrinsic region is not negligible but dominant at a higher gate voltage.

引用

页码：2296 / 2299

页数：4

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