The influence of pressure on the growth of a-plane GaN on r-plane sapphire substrates by MOCVD

被引：1

作者：

He Tao ^{[1
]}

Li Hui ^{[1
]}

Dai LongGui ^{[1
]}

Wang XiaoLi ^{[1
]}

Chen Yao ^{[1
]}

Ma ZiGuang ^{[1
]}

Xu PeiQiang ^{[1
]}

Jiang Yang ^{[1
]}

Wang Lu ^{[1
]}

Jia HaiQiang ^{[1
]}

Wang WenXin ^{[1
]}

Chen Hong ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter, Inst Phys, Beijing 100190, Peoples R China

来源：

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2011年 / 54卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN; anisotropy; XRD; growth pressure; MOCVD; CHEMICAL-VAPOR-DEPOSITION; QUANTUM-WELLS; PHOTOLUMINESCENCE; NITRIDE; FIELDS; LAYERS;

D O I：

10.1007/s11433-010-4232-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Nonpolar a-plane (11 (2) over bar0) GaN films have been grown on r-plane (1 (1) over bar 02) sapphire by metal-organic chemical vapor deposition (MOCVD) under different growth pressures. The as-grown films are investigated by optical microscopy, high-resolution X-ray diffraction (HRXRD) and Raman scattering. As growth pressure rises from 100 mbar to 400 mbar, the surface gets rougher, and the in-plane XRD full width at half maximum (FWHM) along the c-axis [0001] increases while that along the m-axis [(1) over bar 100] decreases. Meanwhile, residential stresses are reduced along both the c-axis and the m-axis. The structural anisotropy feature under 400 mbar is inverted with respect to 100 mbar, and the weakened anisotropy is achieved under a moderate pressure of 200 mbar, probably due to the suppressed Ga atomic migration along the c-axis under a larger pressure. We propose that pressure can affect a-plane growth through the V/III ratio.

引用

页码：446 / 449

页数：4

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