Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer

被引：31
|
作者：
Cheng, C. H. [1 ,2 ]
Chen, P. C. [3 ]
Wu, Y. H. [3 ]
Yeh, F. S. [1 ,2 ]
Chin, Albert [4 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 12期
关键词：
GeO2; hopping conduction; resistive random access memory (RRAM); TiO2;
D O I：
10.1109/LED.2011.2168939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
引用
收藏
页码：1749 / 1751
页数：3
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