Resistive memory switching in ultrathin TiO2 films grown by atomic layer deposition

被引：6
|
作者：
Sahu, V. K. [1 ]
Misra, P. [1 ]
Ajimsha, R. S. [1 ]
Das, A. K. [1 ]
Joshi, M. P. [1 ]
Kukreja, L. M. [1 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Laser Mat Proc Div, Indore 452013, Madhya Pradesh, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷
关键词：
TiO2; Resistive RAM; Atomic layer deposition; Conductive filament model; PULSED-LASER DEPOSITION;
D O I：
10.1063/1.4948104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electric field controlled forming free and unipolar resistive memory switching was observed in Au/TiO2/Pt devices containing ultrathin TiO2 films of thickness similar to 4 nm grown by atomic layer deposition. These devices showed a large resistance ratio of similar to 10(3) between high and low resistance states along with appreciable time retention for similar to 10(4) seconds and endurance. The spread of reset and set voltages was from similar to 0.4-0.6 V and 1.1-1.5 V respectively with a clear window between them. The resistive switching mechanism was explained based on conductive filamentary model.
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页数：3
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