Resistive memory switching in ultrathin TiO2 films grown by atomic layer deposition

被引：6
|
作者：
Sahu, V. K. [1 ]
Misra, P. [1 ]
Ajimsha, R. S. [1 ]
Das, A. K. [1 ]
Joshi, M. P. [1 ]
Kukreja, L. M. [1 ]
机构：
[1] Raja Ramanna Ctr Adv Technol, Laser Mat Proc Div, Indore 452013, Madhya Pradesh, India
来源：
DAE SOLID STATE PHYSICS SYMPOSIUM 2015 | 2016年 / 1731卷
关键词：
TiO2; Resistive RAM; Atomic layer deposition; Conductive filament model; PULSED-LASER DEPOSITION;
D O I：
10.1063/1.4948104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electric field controlled forming free and unipolar resistive memory switching was observed in Au/TiO2/Pt devices containing ultrathin TiO2 films of thickness similar to 4 nm grown by atomic layer deposition. These devices showed a large resistance ratio of similar to 10(3) between high and low resistance states along with appreciable time retention for similar to 10(4) seconds and endurance. The spread of reset and set voltages was from similar to 0.4-0.6 V and 1.1-1.5 V respectively with a clear window between them. The resistive switching mechanism was explained based on conductive filamentary model.
引用
收藏
页数：3
相关论文
共 50 条
  • [21] Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
    Huang, Ruomeng
    Sun, Kai
    Kiang, Kian S.
    Morgan, Katrina A.
    de Groot, C. H.
    [J]. MICROELECTRONIC ENGINEERING, 2016, 161 : 7 - 12
  • [22] Atomic layer deposition of thin oxide films for resistive switching
    Froehlich, K.
    Jancovic, P.
    Hudec, B.
    Derer, J.
    Paskaleva, A.
    Bertaud, T.
    Schroeder, T.
    [J]. ATOMIC LAYER DEPOSITION APPLICATIONS 9, 2013, 58 (10): : 163 - 170
  • [23] Switching characteristics in TiO2/ZnO double layer resistive switching memory device
    Jain, Praveen K.
    Salim, Mohammad
    Chand, Umesh
    Periasamy, C.
    [J]. MATERIALS RESEARCH EXPRESS, 2017, 4 (06):
  • [24] Effect of crystal structure on optical properties of TiO2 films grown by atomic layer deposition
    Aarik, J
    Aidla, A
    Kiisler, AA
    Uustare, T
    Sammelselg, V
    [J]. THIN SOLID FILMS, 1997, 305 (1-2) : 270 - 273
  • [25] Experimentally informed structure optimization of amorphous TiO2 films grown by atomic layer deposition
    Meng, Jun
    Abbasi, Mehrdad
    Dong, Yutao
    Carlos, Corey
    Wang, Xudong
    Hwang, Jinwoo
    Morgan, Dane
    [J]. NANOSCALE, 2023, 15 (02) : 718 - 729
  • [26] Redox Properties of TiO2 Thin Films Grown on Mesoporous Silica by Atomic Layer Deposition
    Ke, Wang
    Qin, Xiangdong
    Palomino, Robert M.
    Simonovis, Juan Pablo
    Senanayake, Sanjaya D.
    Rodriguez, Jose A.
    Zaera, Francisco
    [J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2023, 14 (20): : 4696 - 4703
  • [27] Effect of nitrogen doping concentration on the properties of TiO2 films grown by atomic layer deposition
    Cheng, Hsyi-En
    Chen, Yu-Ru
    Wu, Wen-Tuan
    Hsu, Ching-Ming
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2011, 176 (07): : 596 - 599
  • [28] Transmission electron microscopy studies of atomic layer deposition TiO2 films grown on silicon
    Mitchell, DRG
    Attard, DJ
    Triani, G
    [J]. THIN SOLID FILMS, 2003, 441 (1-2) : 85 - 95
  • [29] Atomic layer deposition for TiO2 and TiN nanometer films
    Insepov, Zeke
    Ainabayev, Ardak
    Bozheyev, Farabi
    Zhuldassov, Abat
    Lukasheva, Maria
    Tynyshtykbaev, Kurbangali B.
    [J]. MATERIALS TODAY-PROCEEDINGS, 2017, 4 (11) : 11630 - 11639
  • [30] Nanoscale Characterization of TiO2 Films Grown by Atomic Layer Deposition on RuO2 Electrodes
    Murakami, Katsuhisa
    Rommel, Mathias
    Hudec, Boris
    Rosova, Alica
    Husekova, Kristina
    Dobrocka, Edmund
    Rammula, Raul
    Kasikov, Aarne
    Han, Jeong Hwan
    Lee, Woongkyu
    Song, Seul Ji
    Paskaleva, Albena
    Bauer, Anton J.
    Frey, Lothar
    Froehlich, Karol
    Aarik, Jaan
    Hwang, Cheol Seong
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (04) : 2486 - 2492
12345