HfOx Bipolar Resistive Memory With Robust Endurance Using AlCu as Buffer Electrode

被引：54

作者：

Lee, Heng Yuan ^{[1
,2
]}

Chen, Pang-Shiu ^{[3
]}

Wu, Tai-Yuan ^{[1
]}

Chen, Yu Sheng ^{[1
]}

Chen, Fred ^{[1
]}

Wang, Ching-Chiun ^{[1
]}

Tzeng, Pei-Jer ^{[1
]}

Lin, C. H. ^{[1
]}

Tsai, Ming-Jinn ^{[1
]}

Lien, Chenhsin ^{[2
]}

机构：

[1] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 310, Taiwan

[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[3] Minghsin Univ Sci & Technol, Dept Mat Sci & Engn, Hsinchu 304, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 07期

关键词：

AlCu; HfOx; resistive random access memory (RRAM); trap and detrap;

D O I：

10.1109/LED.2009.2021004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method of fabricating HfOx-based resistive memory device with excellent nonvolatile characteristics is proposed. By using a thin AlCu layer as the reactive buffer layer into the anodic side of a capacitor-like memory cell, excellent memory performances, which include reliable programming/erasing endurance (> 10(5) cycles), robust data retention at high temperature, and fast operation speed (< 50 ns), have been demonstrated. The resistive memory based on AlCu/HfOx stacked layer in this letter shows promising application in the next generation of nonvolatile memory.

引用

页码：703 / 705

页数：3

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