Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer

被引：31
|
作者：
Cheng, C. H. [1 ,2 ]
Chen, P. C. [3 ]
Wu, Y. H. [3 ]
Yeh, F. S. [1 ,2 ]
Chin, Albert [4 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect, Hsinchu 300, Taiwan
[3] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 300, Taiwan
[4] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 12期
关键词：
GeO2; hopping conduction; resistive random access memory (RRAM); TiO2;
D O I：
10.1109/LED.2011.2168939
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
引用
收藏
页码：1749 / 1751
页数：3
相关论文
共 50 条
  • [41] Effects of TiO2 buffer layer on the photoelectrochemical properties of TiO2 Nanorods grown by modified chemical bath deposition method
    Lee, Tae-hyun
    Ha, Jin-wook
    Ryu, Hyukhyun
    Lee, Won-Jae
    [J]. KOREAN JOURNAL OF METALS AND MATERIALS, 2015, 53 (08): : 591 - 599
  • [42] Nanostructured resistive memory cells based on 8-nm-thin TiO2 films deposited by atomic layer deposition
    Kuegeler, C.
    Zhang, J.
    Hoffmann-Eifert, S.
    Kim, S. K.
    Waser, R.
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01):
  • [43] Fabrication of Textured Rough SnO2:F Films on Glass Using TiO2 Film as a Buffer Layer
    Yang Ren
    Qiuhong Wang
    Xiaoge Zhou
    Yun Gao
    Gaoyang Zhao
    [J]. Journal of Electronic Materials, 2017, 46 : 6864 - 6869
  • [44] Fabrication of Textured Rough SnO2:F Films on Glass Using TiO2 Film as a Buffer Layer
    Ren, Yang
    Wang, Qiuhong
    Zhou, Xiaoge
    Gao, Yun
    Zhao, Gaoyang
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2017, 46 (12) : 6864 - 6869
  • [45] Memory and threshold resistive switching in BiFeO3 thin films using NiO as a buffer layer
    Luo, Jinming
    Zhang, Haining
    Chen, Shuhan
    Yang, Xiaodong
    Bu, Shouliang
    Wen, Jianping
    [J]. CHEMICAL PHYSICS LETTERS, 2016, 652 : 98 - 101
  • [46] Correlated resistive/capacitive state variability in solid TiO2 based memory devices
    Qingjiang Li
    Iulia Salaoru
    Ali Khiat
    Hui Xu
    Themistoklis Prodromakis
    [J]. Applied Physics A, 2017, 123
  • [47] Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory
    Zhang, Feng
    Gan, Xiaoyan
    Li, Xiaomin
    Wu, Liang
    Gao, Xiangdong
    Zheng, Renkui
    He, Yong
    Liu, Xinjun
    Yang, Rui
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (10) : H422 - H425
  • [48] Correlated resistive/capacitive state variability in solid TiO2 based memory devices
    Li, Qingjiang
    Salaoru, Iulia
    Khiat, Ali
    Xu, Hui
    Prodromakis, Themistoklis
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2017, 123 (05):
  • [49] Polymer photovoltaic cells using low-temperature annealed TiO2 nanoparticles film as buffer layer
    Li, Ming-Yang
    Han, Xue-Song
    Xu, Xin-Rui
    Ma, Chun-Yu
    Yang, Li-Ying
    Qin, Wen-Jing
    Yin, Shou-Gen
    Zhang, Feng-Ling
    [J]. Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2013, 24 (09): : 1673 - 1678
  • [50] Asymmetric Bipolar Resistive Switching of Halide Perovskite Film in Contact with TiO2 Layer
    Lee, Seongha
    Wolfe, Sarah
    Torres, Jorge
    Yun, Minhee
    Lee, Jung-Kun
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (23) : 27209 - 27216
12345