Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve fT

被引：6

作者：

Al-Amin, C. ^{[1
]}

Karabiyik, M. ^{[1
]}

Pala, N. ^{[1
]}

机构：

[1] Florida Int Univ, Dept Elect & Comp Engn, Miami, FL 33174 USA

来源：

MICROELECTRONIC ENGINEERING | 2016年 / 164卷

关键词：

Graphene; Field-effect Transistor; RF; Fabrication; Access resistance; FETS;

D O I：

10.1016/j.mee.2016.07.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the fabrication and DC/RF characterization of a novel Graphene Field-effect Transistor (GFET) with two additional contacts at the access regions. The additional contacts Field Controlling Electrodes (FCEs), are capacitively coupled to the ungated access regions and independently biased to control the access resistance. The reduced access resistance resulted in an increased current-gain cutoff frequency (f(T)). The fabricated proposed device could be used for radio frequency (RF) applications. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：71 / 74

页数：4

共 50 条

[41] Fabrication and Characterization of Carbon Nanotube Field-Effect Transistor Biosensors
Leyden, Matthew R.
Schuman, Canan
Sharf, Tal
Kevek, Josh
Remcho, Vincent T.
Minot, Ethan D.
ORGANIC SEMICONDUCTORS IN SENSORS AND BIOELECTRONICS III, 2010, 7779
[42] Fabrication of a heterostructure field-effect transistor using AlGaN/GaN
Yoshida, S
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 957 - 960
[43] FABRICATION AND CHARACTERISTICS OF A THIN-FILM FIELD-EFFECT TRANSISTOR
JAWALEKAR, SR
RAO, MK
THIN SOLID FILMS, 1979, 64 (01) : 40 - 40
[44] Fabrication of field-effect transistor devices with fullerodendron by solution process
Kusai, H
Nagano, T
Imai, K
Kubozono, Y
Sako, Y
Takaguchi, Y
Fujiwara, A
Akima, N
Iwasa, Y
Hino, S
APPLIED PHYSICS LETTERS, 2006, 88 (17)
[45] Fabrication of field-effect transistor devices with fullerene related materials
Nagano, T.
Kusai, H.
Ochi, K.
Ohta, T.
Imai, K.
Kubozono, Y.
Fujiwara, A.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2006, 243 (13): : 3021 - 3024
[46] Fabrication of an organic field-effect transistor on a mica gate dielectric
Matsumoto, Akira
Onoki, Ryo
Ueno, Keiji
Ikeda, Susumu
Saiki, Koichiro
CHEMISTRY LETTERS, 2006, 35 (04) : 354 - 355
[47] Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
Britnell, L.
Gorbachev, R. V.
Jalil, R.
Belle, B. D.
Schedin, F.
Mishchenko, A.
Georgiou, T.
Katsnelson, M. I.
Eaves, L.
Morozov, S. V.
Peres, N. M. R.
Leist, J.
Geim, A. K.
Novoselov, K. S.
Ponomarenko, L. A.
SCIENCE, 2012, 335 (6071) : 947 - 950
[48] Bandgap Engineering of Bilayer Graphene for Field-Effect Transistor Channels
Sano, Eiichi
Otsuji, Taiichi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0916051 - 0916053
[49] Super tiny nanoscale graphene nanoribbon field-effect transistor
Yi Zhijie
Shao Qingyi
Zhang Juan
CHINESE JOURNAL OF PHYSICS, 2019, 59 : 572 - 577
[50] Plasmonic and bolometric terahertz detection by graphene field-effect transistor
Muraviev, A. V.
Rumyantsev, S. L.
Liu, G.
Balandin, A. A.
Knap, W.
Shur, M. S.
APPLIED PHYSICS LETTERS, 2013, 103 (18)

← 1 2 3 4 5 →