High-voltage polarization-induced vertical heterostructure p-n junction diodes on bulk GaN substrates

被引：0

作者：

Qi, Meng ^{[1
]}

Namoto, Kazuki ^{[1
]}

Zhu, Mingda ^{[1
]}

Hu, Zongyang ^{[1
]}

Zhao, Yuning ^{[1
]}

Song, Bo ^{[1
]}

Li, Guowang ^{[1
]}

Fay, Patrick ^{[1
]}

Xing, Huili ^{[1
]}

Jena, Debdeep ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

来源：

2015 73RD ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2015年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：31 / 32

页数：2

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