Impact of Radiation-Induced Single-Event Transients on High Resolution Time to Digital Converter

被引:0
|
作者
Balaji, S. [1 ]
Ramasamy, S. [2 ]
机构
[1] Loyola ICAM Coll Engn & Technol, Dept ECE, Madras, Tamil Nadu, India
[2] RMK Engn Coll, Dept ECE, Kavaraipettai, Tamil Nadu, India
关键词
Delay-Locked Loop; Time to Digital Converter; Single Event Transients; LOCKED LOOPS; DESIGN;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The paper presents the analysis of radiation-induced Single-Event Transients (SET) in Delay-Locked Loop (DLL) and its impact in the digital output of Time-to-Digital Converter (TDC). The performance of the TDC such as Differential Non-Linearity (DNL), Integral Non-Linearity (INL), resolution etc. are degraded due propagation of the SET from the DLL. The use of improved pseudo differential current-starved delay cell structure in the Voltage Controlled Delay Line (VCDL) in DLL reduces the impact of radiation-induced SET in DLL, and enhances the robustness of DLL based TDC. This effort represents the first of its kind SET analysis on a DLL based TDC. The proposed DLL based TDC is designed in the AMS 180 nm CMOS technology and simulations show that the number of missing pulses on a SET strike in the modified pseudo differential delay cell is reduced to 50% than compared the conventional architectures.
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页数:5
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