Subthreshold leakage due to 1/f noise and RTS(random telegraph signals)

被引：1

作者：

Miller, Drake A. ^{[1
]}

Poocharoen, Panupat ^{[1
]}

Forbes, Leonard ^{[1
]}

机构：

[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA

来源：

2007 IEEE WORKSHOP ON MICROELECTRONICS AND ELECTRON DEVICES | 2007年

关键词：

subthreshold current; subthreshold models; leakage current; memory retention time;

D O I：

10.1109/WMED.2007.368840

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.

引用

页码：23 / 24

页数：2

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