Subthreshold leakage due to 1/f noise and RTS(random telegraph signals)

被引:1
|
作者
Miller, Drake A. [1 ]
Poocharoen, Panupat [1 ]
Forbes, Leonard [1 ]
机构
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
关键词
subthreshold current; subthreshold models; leakage current; memory retention time;
D O I
10.1109/WMED.2007.368840
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
An analysis of subthreshold leakage predicts a Gaussian or Normal distribution on large devices but a distorted distribution is possible on small devices. 1/f noise due to RTS signals on large well behaved devices will have a Gaussian distribution and cause a Gaussian current distribution under normal and subthreshold operating conditions. Localized channels or percolation channels can cause a distortion of this distribution and large subthreshold leakage current pulses which are most obvious in small devices.
引用
收藏
页码:23 / 24
页数:2
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