Capture Cross Section of Traps Causing Random Telegraph Noise in Gate-Induced Drain Leakage Current

被引：6

作者：

Yoo, Sung-Won ^{[1
,2
]}

Son, Younghwan ^{[1
,2
]}

Shin, Hyungcheol ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul 151742, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 03期

关键词：

Capture cross section (sc); gate-induced drain leakage (GIDL); lattice coordinate configuration; multiphonon emission (MPE); random telegraph noise (RTN); EXTRACTION; SIGNALS; ENERGY;

D O I：

10.1109/TED.2013.2239299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief, we investigated random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a MOSFET. Using the resulting RTN measurement data, the capture cross section (sigma(c)) of the trap was extracted, and a more accurate sigma(c) model was introduced. The bias dependence of sigma(c) was then analyzed.

引用

页码：1268 / 1271

页数：4

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