Study on the Oxide Trap Distribution in a Thin Gate Oxide from Random Telegraph Noise in the Drain Current and the Gate Leakage Current

Random telegraph noise in the drain current (I-d RTN) and the gate current (I-g RTN) has been studied to characterize slow oxide traps in a thin gate oxide. First, I-g RTN was classified into two categories from its dependence on gate bias. Through the analysis of I-d and I-g RTNs, the distribution of oxide traps in the thin oxide was also studied. Most of the oxide traps obtained from I-d RTN were found to be in the middle range of the oxide and to have an energy level within a narrow range whereas the oxide traps from I-g RTN were widely distributed.