Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

被引：0

作者：

Liu, Fangyue

Tan, Kian-Ming

Wang, Xincai

Low, David Kuang Yong

Lai, Doreen Mei Ying

Lim, Poh Chong

Samudra, Ganesh

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Silicon Nano Device Lab, Singapore 117576, Singapore

[2] SIMTECH, Singapore 638075, Singapore

[3] Inst Mat Res & Engn, Agcy Sci Technol & Res, Singapore 117685, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 09期

关键词：

D O I：

10.1063/1.2812565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The supersaturated and metastable boron produced by laser anneal could deactivate during post-laser-thermal-cycles and lead to undesirable performance degradation. The effect of tin incorporation on the thermal stability of boron was studied for the first time and suppressed boron deactivation during post-laser-rapid-thermal-anneal was observed with tin coimplantation. High resolution x-ray diffraction measurement indicates that the tensile strain caused by a high boron concentration was reduced by the introduction of tin, which effectively reduces the strain energy and therefore, enhances the thermal stability of boron in post-laser-anneal rapid thermal processing.(c) 2007 American Institute of Physics.

引用

页数：4

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