Study of Ge0.96Si0.04 epilayers grown on Si (001) at high temperature

被引：6
|
作者：
Peng, CS [1 ]
Kawanami, H
Li, YK
Li, GH
Huang, Q
Zhou, JM
机构：
[1] Beijing Normal Univ, Key Lab Univ Radiat Beam Technol & Mat, Beijing 100875, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
[4] Electrotech Lab, Elect Device Div, Tsukuba, Ibaraki 3058568, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷
关键词：
defects; molecular beam epitaxy; germanium silicon alloys; semiconducting germanium; semiconducting silicon;
D O I：
10.1016/S0022-0248(01)00861-2
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied the propcrties of Ge0.96Si0.04 epilayers grown at high temperature on Si (0 0 1) substrates by X-ray diffraction, Raman spectra, and high-resolution transmission electron microscopy (TEM). Raman spectra show that there is an obvious transition region between the Ge0.96Si0.04 layer ang the Si substrate. The thickness of this region is about 100nm. Towards the Ge0.96Si0.04 layer, the Si fraction decreases rapidly from about 30 to 4%. In X-ray diffraction, there is a sharp peak of Ge0.96Si0.04 and a broad peak of the GeSi alloy region with lower Ge fraction. High resolution of cross-sectional TEM images show that the interface of GcSi/Si substrate is :1 1 Ij faceted. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：786 / 790
页数：5
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