ELECTRONIC-STRUCTURE OF GE SI SUPERLATTICES GROWN ON GE(001)

被引：1
|
作者：
GULSEREN, O
CIRACI, S
机构：
[1] Dept. of Phys., Bilkent Univ., Ankara
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 07期
关键词：
D O I：
10.1088/0268-1242/6/7/014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have studied the electronic energy structure of pseudomorphic Ge(m)/Si(n) superlattices by using the empirical tight-binding method. Effects of the band offset, sublattice periodicity and the lateral lattice constant on the transition energies have been investigated. We found that Ge(m)/Si(n) superlattices grown on Ge (001) can have a direct band gap, if m + n = 10 and m = 6. However, optical matrix elements for in-plane and perpendicular polarized light are negligible for the transition from the highest valence band to the lowest conduction band state at the centre of the superlattice Brillouin zone.
引用
收藏
页码：638 / 641
页数：4
相关论文
共 50 条
  • [1] THE ELECTRONIC-STRUCTURE OF SI/GE SUPERLATTICES
    BASS, JM
    MATTHAI, CC
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 : SB209 - SB210
  • [2] ELECTRONIC-STRUCTURE OF [111]SI/GE SUPERLATTICES
    BASS, JM
    MATTHAI, CC
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (38) : 7841 - 7846
  • [3] ATOMIC AND ELECTRONIC-STRUCTURE OF SI-GE SUPERLATTICES
    VAN DE WALLE, CG
    [J]. PHYSICAL REVIEW LETTERS, 1989, 62 (08) : 974 - 974
  • [4] ELECTRONIC-STRUCTURE OF SI-GE STRAINED SUPERLATTICES
    TEJEDOR, C
    BREY, L
    [J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 557 - 560
  • [5] PIEZOREFLECTANCE OF STRAINED SI/GE SUPERLATTICES GROWN ON GE(001)
    YIN, YC
    YAN, D
    POLLAK, FH
    HYBERTSEN, MS
    VANDENBERG, JM
    BEAN, JC
    [J]. SURFACE SCIENCE, 1992, 267 (1-3) : 99 - 102
  • [6] UNIFIED APPROACH TO THE ELECTRONIC-STRUCTURE OF STRAINED SI/GE SUPERLATTICES
    TSERBAK, C
    POLATOGLOU, HM
    THEODOROU, G
    [J]. PHYSICAL REVIEW B, 1993, 47 (12): : 7104 - 7124
  • [7] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SI/GE SUPERLATTICES
    PAPADOGONAS, IA
    ANDRIOTIS, AN
    ECONOMOU, EN
    [J]. EUROPHYSICS LETTERS, 1995, 31 (02): : 113 - 118
  • [8] ELECTRONIC-STRUCTURE OF SN/GE SUPERLATTICES
    MUNZAR, D
    CHRISTENSEN, NE
    [J]. PHYSICAL REVIEW B, 1994, 49 (16): : 11238 - 11247
  • [9] STRUCTURE AND OPTICAL-PROPERTIES OF STRAINED GE-SI SUPERLATTICES GROWN ON (001) GE
    PEARSALL, TP
    VANDENBERG, JM
    HULL, R
    BONAR, JM
    [J]. PHYSICAL REVIEW LETTERS, 1989, 63 (19) : 2104 - 2107
  • [10] NOVEL RELAXATION PROCESS IN STRAINED SI/GE SUPERLATTICES GROWN ON GE(001)
    WEGSCHEIDER, W
    EBERL, K
    ABSTREITER, G
    CERVA, H
    OPPOLZER, H
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1496 - 1498
12345