ATOMIC AND ELECTRONIC-STRUCTURE OF SI-GE SUPERLATTICES

被引：4

作者：

VAN DE WALLE, CG ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, DIV RES, YORKTOWN HTS, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 1989年 / 62卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.62.974

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：974 / 974

页数：1

共 50 条

[1] ELECTRONIC-STRUCTURE OF SI-GE STRAINED SUPERLATTICES
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[J]. JOURNAL DE PHYSIQUE, 1987, 48 (C-5): : 557 - 560
[2] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES
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[J]. PHYSICAL REVIEW LETTERS, 1988, 60 (21) : 2221 - 2224
[3] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES - COMMENT
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[4] ELECTRONIC-STRUCTURE OF [110] SI-GE THIN-LAYER SUPERLATTICES
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[5] ELECTRONIC-STRUCTURE AND OPTICAL-PROPERTIES OF SI-GE SUPERLATTICES - REPLY
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[6] THE ELECTRONIC-STRUCTURE OF SI/GE SUPERLATTICES
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[8] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE
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[9] ELECTRONIC-STRUCTURE OF GE SI SUPERLATTICES GROWN ON GE(001)
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[10] THEORETICAL-STUDY ON THE ELECTRONIC-STRUCTURE OF SI-GE COPOLYMERS
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