Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems

被引：0
|
作者：
Budianu, E [1 ]
Purica, M [1 ]
Rusu, E [1 ]
机构：
[1] Natl Inst Res & Dev Microtechnol, Bucharest 72225, Romania
来源：
2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is presented the optimization of a quadrant p-i-n photodiode structure on InGaAs/InP heterostructures suited for infrared laser telemetry and optical centering applications. Taking into account the influence of material characteristics and structure parameters on the photoresponse was designed and fabricated a quadrant photodiode characterized by a responsivity of 0.62 A/W for each photodetector element, a good photoresponse uniformity on active area with deviations less than 1 percent and a good position resolution obtained by minimizing the crosstalk between elements.
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页码：381 / 384
页数：4
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