Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise

被引：1
|
作者：
Akiba, Makoto [1 ]
Kanai, Yoshikazu [2 ]
机构：
[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan
[2] Genesia Corp, Mitaka, Tokyo 1810013, Japan
来源：
OPTICS LETTERS | 2012年 / 37卷 / 12期
关键词：
D O I：
10.1364/OL.37.002235
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We developed a highly sensitive infrared photodetection system using an InGaAs p-i-n photodiode. The temperature and data sampling rate dependences of the readout noise were measured to determine the optimum temperature for low-noise detection. The optimum temperature for sampling rates below 100 Hz was 100 K, and the readout noise at 1 Hz was 2.5 e. The readout noise at 1 MHz and 140 K was 49.4 e. The light detection limit of the system was 8.2 x 10(-19) W at a wavelength of 1.3 mu m. The spectral noise densities of a readout circuit were measured in order to determine the origin of noise. (C) 2012 Optical Society of America
引用
收藏
页码：2235 / 2237
页数：3
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