Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise

被引：1

作者：

Akiba, Makoto ^{[1
]}

Kanai, Yoshikazu ^{[2
]}

机构：

[1] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[2] Genesia Corp, Mitaka, Tokyo 1810013, Japan

来源：

OPTICS LETTERS | 2012年 / 37卷 / 12期

关键词：

D O I：

10.1364/OL.37.002235

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We developed a highly sensitive infrared photodetection system using an InGaAs p-i-n photodiode. The temperature and data sampling rate dependences of the readout noise were measured to determine the optimum temperature for low-noise detection. The optimum temperature for sampling rates below 100 Hz was 100 K, and the readout noise at 1 Hz was 2.5 e. The readout noise at 1 MHz and 140 K was 49.4 e. The light detection limit of the system was 8.2 x 10(-19) W at a wavelength of 1.3 mu m. The spectral noise densities of a readout circuit were measured in order to determine the origin of noise. (C) 2012 Optical Society of America

引用

页码：2235 / 2237

页数：3

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