Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems

It is presented the optimization of a quadrant p-i-n photodiode structure on InGaAs/InP heterostructures suited for infrared laser telemetry and optical centering applications. Taking into account the influence of material characteristics and structure parameters on the photoresponse was designed and fabricated a quadrant photodiode characterized by a responsivity of 0.62 A/W for each photodetector element, a good photoresponse uniformity on active area with deviations less than 1 percent and a good position resolution obtained by minimizing the crosstalk between elements.