Optimization of InGaAs/InP p-i-n photodiode for dual axis position detection systems

被引：0
|
作者：
Budianu, E [1 ]
Purica, M [1 ]
Rusu, E [1 ]
机构：
[1] Natl Inst Res & Dev Microtechnol, Bucharest 72225, Romania
来源：
2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS | 2000年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is presented the optimization of a quadrant p-i-n photodiode structure on InGaAs/InP heterostructures suited for infrared laser telemetry and optical centering applications. Taking into account the influence of material characteristics and structure parameters on the photoresponse was designed and fabricated a quadrant photodiode characterized by a responsivity of 0.62 A/W for each photodetector element, a good photoresponse uniformity on active area with deviations less than 1 percent and a good position resolution obtained by minimizing the crosstalk between elements.
引用
收藏
页码：381 / 384
页数：4
相关论文
共 50 条
  • [31] Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
    Wang, X. D.
    Hu, W. D.
    Chen, X. S.
    Lu, W.
    Tang, H. J.
    Li, T.
    Gong, H. M.
    OPTICAL AND QUANTUM ELECTRONICS, 2008, 40 (14-15) : 1261 - 1266
  • [32] Investigation of InGaAs P-I-N photodiode for optical-microwave mixing process
    Piotrowski, JK
    Galwas, BA
    Malyshev, SA
    Andrievski, VF
    MIKON-98: 12TH INTERNATIONAL CONFERENCE ON MICROWAVES & RADAR, VOLS 1-4, 1998, : 171 - 175
  • [33] Dark current simulation of InP/In0.53Ga0.47As/InP p-i-n photodiode
    X. D. Wang
    W. D. Hu
    X. S. Chen
    W. Lu
    H. J. Tang
    T. Li
    H. M. Gong
    Optical and Quantum Electronics, 2008, 40 : 1261 - 1266
  • [34] OPTIMIZATION OF THE COUPLING BETWEEN A TAPERED FIBER AND A P-I-N PHOTODIODE
    LATRY, O
    KETATA, M
    KETATA, K
    DEBRIE, R
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1995, 28 (08) : 1562 - 1572
  • [35] Cryogenic performance of a high-speed GaInAs/InP p-i-n photodiode
    Zhang, YM
    Borzenets, V
    Dubash, N
    Reynolds, T
    Wey, YG
    Bowers, J
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1997, 15 (03) : 529 - 533
  • [36] InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
    Hsu, SH
    Johnson, FG
    Tabatabaei, SA
    Agarwala, S
    Hryniewicz, JV
    Towner, FJ
    Chen, YJ
    Stone, DR
    COMPOUND SEMICONDUCTORS 1997, 1998, 156 : 409 - 412
  • [37] Optically heterodyne diagnosis of a high-saturation-power undoped InP sandwiched InGaAs p-i-n photodiode grown on GaAs
    Liao, Yu-Sheng
    Shi, Jin-Wei
    Wu, Y. -S.
    Kuo, Hao-Chung
    Feng, M.
    Lin, Gong-Ru
    OPTICS EXPRESS, 2006, 14 (12) : 5031 - 5037
  • [38] InGaAs/InP p-i-n heterostructure photodiode arrays on AlGaAs/GaAs waveguide films by solid source molecular beam epitaxy
    Hsu, SH
    Johnson, FG
    Tabatabaei, SA
    Agarwala, S
    Hryniewicz, JV
    Towner, FJ
    Chen, YJ
    Stone, DR
    1997 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 1998, : 409 - 412
  • [39] SiOx coverage mesa-typed InGaAs/InP P-I-N photodetector
    Tang, Shiang-Feng
    Liao, Xue-Liang
    Tsai, Hong-Niau
    Hao-Lai, Man
    Chen, Tzu-Chiang
    Chuang, Hsiu Hsiu
    Yang, San-Te
    Chiang, Cheng-Der
    2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4, 2007, : 1199 - +
  • [40] Minority carrier diffusion in InGaAs/InP P-i-N heterojunctions for photodetector arrays
    Walker, A. W.
    Pitts, O. J.
    Storey, C.
    Waldron, P.
    Flueraru, C.
    OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (02)
12345