Pass-Transistor Logic Circuits Based on Wafer-Scale 2D Semiconductors

被引:25
|
作者
Wang, Xinyu [1 ]
Chen, Xinyu [1 ]
Ma, Jingyi [1 ]
Gou, Saifei [1 ]
Guo, Xiaojiao [1 ]
Tong, Ling [1 ]
Zhu, Junqiang [2 ]
Xia, Yin [1 ]
Wang, Die [1 ]
Sheng, Chuming [1 ]
Chen, Honglei [1 ]
Sun, Zhengzong [1 ]
Ma, Shunli [1 ]
Riaud, Antoine [1 ]
Xu, Zihan [3 ]
Cong, Chunxiao [2 ]
Qiu, Zhijun [2 ]
Zhou, Peng [1 ]
Xie, Yufeng [1 ]
Bian, Lifeng [4 ]
Bao, Wenzhong [1 ]
机构
[1] Fudan Univ, Zhangjiang Fudan Int Innovat Ctr, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
[2] Fudan Univ, Sch Informat Sci & Engn, Shanghai 200433, Peoples R China
[3] Shenzhen Six Carbon Technol, Shenzhen 518055, Peoples R China
[4] Fudan Univ, Frontier Inst Chip & Syst, Shanghai 200433, Peoples R China
关键词
2D semiconductors; complementary pass-transistor logic; integrated circuits; molybdenum disulfide (MoS; (2)); pseudo-NMOS logic gates; INTEGRATED-CIRCUITS; FABRICATION;
D O I
10.1002/adma.202202472
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D semiconductors, such as molybdenum disulfide (MoS2), have attracted tremendous attention in constructing advanced monolithic integrated circuits (ICs) for future flexible and energy-efficient electronics. However, the development of large-scale ICs based on 2D materials is still in its early stage, mainly due to the non-uniformity of the individual devices and little investigation of device and circuit-level optimization. Herein, a 4-inch high-quality monolayer MoS2 film is successfully synthesized, which is then used to fabricate top-gated (TG) MoS2 field-effect transistors with wafer-scale uniformity. Some basic circuits such as static random access memory and ring oscillators are examined. A pass-transistor logic configuration based on pseudo-NMOS is then employed to design more complex MoS2 logic circuits, which are successfully fabricated with proper logic functions tested. These preliminary integration efforts show the promising potential of wafer-scale 2D semiconductors for application in complex ICs.
引用
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页数:7
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