Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

被引：0
|
作者：
Alias, Mohd Sharizal [1 ]
Leisher, Paul O. [2 ]
Choquette, Kent D. [2 ]
Anuar, Khairul [1 ]
Siriani, Dominic [2 ]
Mitani, Sufian [1 ]
Razman Y., Mohd [1 ]
Fatah A. M., Abdul [1 ]
机构：
[1] Univ Putra Malaysia, MTDC, Idea Tower, TMR&D, Serdang 43400, Selangor, Malaysia
[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/SMELEC.2006.381052
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a highly uniform 850 urn VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.
引用
收藏
页码：223 / +
页数：2
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