Characterization of AlGaAs/GaAs vertical-cavity surface-emitting laser diode grown on Si substrate by MOCVD

被引：2
|
作者：
Egawa, T [1 ]
Murata, Y [1 ]
Jimbo, T [1 ]
Umeno, M [1 ]
机构：
[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1997年 / 117卷
关键词：
vertical-cavity surface-emitting laser; distributed Bragg reflector; GaAs/Si; heterointerface; roughness; interdiffusion;
D O I：
10.1016/S0169-4332(97)80180-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An AlGaAs/GaAs multi-quantum well vertical-cavity surface-emitting laser diode (VCSELD) has been grown on a Si substrate using metalorganic chemical vapor deposition. The VCSELD structure grown on a Si substrate consists of ten quantum well active layers and a 23-pairs of AlAs/Al0.1Ga0.9As distributed Bragg reflector (DBR). The VCSELD on a Si substrate exhibited a threshold current of 82 mA and 3. threshold current density of 4.2 kA/cm(2) under continuous-wave (cw) condition at 150 K. Cross-sectional scanning electron microscopy observation showed quasi-periodic zigzag roughness and nonuniformity in the DBR structure. Auger-electron spectroscopy also showed compositional transitions at the heterointerfaces of DBR. A low reflectivity of the DBR on Si substrate is caused by the degraded heterointerfaces, which prevent 300 K cw operation for the VCSELD grown on Si.
引用
收藏
页码：771 / 775
页数：5
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