Uniformity study of GaAs-based vertical-cavity surface-emitting laser epiwafer grown by MOCVD technique

被引：0

作者：

Alias, Mohd Sharizal ^{[1
]}

Leisher, Paul O. ^{[2
]}

Choquette, Kent D. ^{[2
]}

Anuar, Khairul ^{[1
]}

Siriani, Dominic ^{[2
]}

Mitani, Sufian ^{[1
]}

Razman Y., Mohd ^{[1
]}

Fatah A. M., Abdul ^{[1
]}

机构：

[1] Univ Putra Malaysia, MTDC, Idea Tower, TMR&D, Serdang 43400, Selangor, Malaysia

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

2006 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/SMELEC.2006.381052

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a highly uniform 850 urn VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.

引用

页码：223 / +

页数：2

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