Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects

被引：8
|
作者：
Yi, Seol-Min [1 ]
Shim, Cheonman [2 ]
Lee, Han-Choon [2 ]
Han, Jae-Won [2 ]
Kim, Kee-Ho [2 ]
Joo, Young-Chang [1 ]
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Dongbu Elect Co, Eumsung 369852, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2008年 / 85卷 / 03期
关键词：
adhesion; capping layer; post-CMP surface treatment;
D O I：
10.1016/j.mee.2007.11.006
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface treatment, cleaning by plasma with vacuum break, cleaning by plasma without vacuum break and cleaning by the wet chemical method. SiNx and SiC were used to cap the surface after the post-CMP cleaning. The adhesion strength between Cu and the capping material was measured using a sandwiched structure constructed for the four point bending test. The X-ray photoemission spectroscopy analysis showed that the adhesion strength is related to the interfacial chemical bonds. The adhesion is influenced by the presence of contaminants and residual oxygen which inhibit the bonding of Si and Cu. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：621 / 624
页数：4
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