Effect of capping layer and post-CMP surface treatments on adhesion between damascene Cu and capping layer for ULSI interconnects

被引:8
|
作者
Yi, Seol-Min [1 ]
Shim, Cheonman [2 ]
Lee, Han-Choon [2 ]
Han, Jae-Won [2 ]
Kim, Kee-Ho [2 ]
Joo, Young-Chang [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[2] Dongbu Elect Co, Eumsung 369852, South Korea
关键词
adhesion; capping layer; post-CMP surface treatment;
D O I
10.1016/j.mee.2007.11.006
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effect of the type of capping layer and post-CMP surface treatments on the adhesion between damascene Cu and the capping layer was investigated. The CMPed-surface was treated by six methods divided into four groups which consisted of no surface treatment, cleaning by plasma with vacuum break, cleaning by plasma without vacuum break and cleaning by the wet chemical method. SiNx and SiC were used to cap the surface after the post-CMP cleaning. The adhesion strength between Cu and the capping material was measured using a sandwiched structure constructed for the four point bending test. The X-ray photoemission spectroscopy analysis showed that the adhesion strength is related to the interfacial chemical bonds. The adhesion is influenced by the presence of contaminants and residual oxygen which inhibit the bonding of Si and Cu. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:621 / 624
页数:4
相关论文
共 36 条
  • [31] Effect of various surface treatments on adhesion strength of magnetron sputtered bi-layer Molybdenum thin films on soda lime glass substrate
    Yadav, Brijesh Singh
    Badgujar, Amol C.
    Dhage, Sanjay R.
    SOLAR ENERGY, 2017, 157 : 507 - 513
  • [32] Effect of suppressing reoxidation at SiO2/SiC interface during post-oxidation annealing in N2O with Al2O3 capping layer
    Kimura, T.
    Ishikawa, T.
    Soejima, N.
    Nomura, K.
    Sugiyama, T.
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 737 - 740
  • [33] Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition
    Kim, Je-Hyung
    Elmaghraoui, Donia
    Leroux, Mathieu
    Korytov, Maxim
    Vennegues, Philippe
    Jaziri, Sihem
    Brault, Julien
    Cho, Yong-Hoon
    NANOTECHNOLOGY, 2014, 25 (30)
  • [34] Interfacial Adhesion Energy of Ru-AlO Thin Film Deposited by Atomic Layer Deposition between Cu and SiO2: Effect of the Composition of Ru-AlO Thin Film
    Kim, Jeong-Kyu
    Cheon, Tae-Hoon
    Kim, Soo-Hyun
    Park, Young-Bae
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (05)
  • [35] Effect of Ar+ radiofrequency plasma treatment conditions on the interfacial adhesion energy between atomic-layer-deposited Al2O3 and Cu thin films in embedded capacitors
    Park, Sung-Cheol
    Park, Young-Bae
    JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (10) : 1565 - 1573
  • [36] Effect of Ar+ Radiofrequency Plasma Treatment Conditions on the Interfacial Adhesion Energy Between Atomic-Layer-Deposited Al2O3 and Cu Thin Films in Embedded Capacitors
    Sung-Cheol Park
    Young-Bae Park
    Journal of Electronic Materials, 2008, 37