Copper nanoparticles embedded in a polyimide film for non-volatile memory applications

被引:17
|
作者
Gupta, Raju Kumar [1 ]
Kusuma, Damar Yoga [2 ]
Lee, P. S. [2 ]
Srinivasan, M. P. [1 ]
机构
[1] Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117576, Singapore
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
关键词
Polyimide; Copper nanoparticles; Solution processable; Nonvolatile memory; FLOATING-GATE MEMORY; TRANSPORT CHARACTERISTICS; THIN-FILM; NANOCRYSTALS; DEVICES;
D O I
10.1016/j.matlet.2011.10.099
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The charge storage and retention characteristics of a nanoparticle-laden thin polyimide film were investigated for application in non-volatile memory devices. Well-dispersed and uniform sized metallic copper nanoparticles (CuNPs) were formed as embedded entities within the confines of polyimide film that was cast from solution. The nanoparticle-containing films were characterized by X-ray photoelectron spectroscopy, atomic force and scanning electron microscopies. Capacitance-voltage measurements showed that the embedded CuNPs functioned as a floating gate in metal-insulator-semiconductor-type capacitor and exhibited a large hysteresis window of 1.52 V. C-t measurements conducted after applying a charging bias of 5 V showed that the charge was retained beyond 20,000 s. The technique holds promise for developing low-cost processes for memory devices that employ relatively inexpensive materials, and yet demonstrate very good performance. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:287 / 289
页数:3
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