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Unified Embedded Non-Volatile Memory for Emerging Mobile Markets

被引：0
|
作者：
Lee, Kangho [1 ]
Kan, Jimmy J. [1 ]
Kang, Seung H. [1 ]
机构：
[1] Qualcomm Technol Inc, Corp R&D, 5775 Morehouse Dr, San Diego, CA 92121 USA
来源：
PROCEEDINGS OF THE 2014 IEEE/ACM INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN (ISLPED) | 2014年
关键词：
Non-volatile memory; STT-MRAM; eFlash; RRAM; FRAM; connectivity; Internet of Things;
D O I：
10.1145/2627369.2631641
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Emerging mobile markets such as wearable electronics and Internet of Things necessitate innovations in embedded nonvolatile memory (eNVM) for energy-efficient mobile computing and connectivity. In this paper, we briefly review how conventional eNVM has served current markets and investigate emerging eNVM in light of new mobile applications on the horizon. We propose spin-transfer-torque MRAM as a unified eNVM solution that can realize an eNVM-only memory configuration and enable emerging mobile products with high energy efficiency at low cost.
引用
收藏
页码：131 / 136
页数：6
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