Trend of Emerging Non-Volatile Memory for AI Processor

被引：2
|
作者：
Chang, Liang [1 ]
Li, Chenglong [1 ]
Zhao, Xin [1 ]
Zhu, Zixuan [1 ]
Tong, Yi [2 ]
Lin, Shuisheng [1 ]
Zhou, Jun [1 ]
机构：
[1] Univ Elect Sci & Technol China, Chengdu 611731, Peoples R China
[2] Gusu Lab Mat, Suzhou 215000, Peoples R China
来源：
18TH INTERNATIONAL SOC DESIGN CONFERENCE 2021 (ISOCC 2021) | 2021年
基金：
国家重点研发计划;
关键词：
AI processor; MRAM; RRAM; Computing-in Memory; Power efficiency; MACRO; READ;
D O I：
10.1109/ISOCC53507.2021.9613905
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Processing unit and memory are key components for artificial intelligent (AI) processor, which are developed by the CMOS technology and static random access memory (SRAM), respectively. As technology scaling down to sub-30 nm, the leakage current has become a critical issue to AI processor. Recently, the emerging non-volatile memory is mature gradually, such as Magnetic RAM (MRAM) and Resistive RAM (RRAM), which can be used to develop AI processor to alternate both processing unit and memory. In this work, we provide a survey on the recent tape-out work on MRAM and RRAM. We discuss the trend of MRAM and RRAM as buffer/Cache, and computing in Memory architecture. Based on the recent developments, we predict both MRAM and RRAM can be a AI product soon.
引用
收藏
页码：223 / 224
页数：2
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