Progress of emerging non-volatile memory technologies in industry

被引：0

作者：

Hellenbrand, Markus ^{[1
]}

Teck, Isabella ^{[1
]}

MacManus-Driscoll, Judith L. ^{[1
]}

机构：

[1] Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge,CB3 0FS, United Kingdom

来源：

MRS Communications | 2024年 / 14卷 / 06期

基金：

英国工程与自然科学研究理事会; 欧洲研究理事会;

关键词：

Associative storage - Carrier concentration - Dynamic random access storage - Ferroelectric thin films - Nanoelectronics - Nonvolatile storage - Phase change memory - Semiconductor device manufacture - Static random access storage;

D O I：

10.1557/s43579-024-00660-2

中图分类号：

学科分类号：

摘要：

This prospective and performance summary provides a view on the state of the art of emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim is to inform academic researchers of the status of these technologies in industry, so as to help direct the right academic research questions for future materials and device development. eNVM already have a strong foothold in the semiconductor industry with the main target of replacing embedded flash memory, and soon possibly DRAM and SRAM, i.e. replacing conventional memory. Magnetic and resistive memory are the current frontrunners among eNVM for embedded flash replacement and they are very advanced in this, which poses high demands on future academic research for eNVM for this purpose. Phase-change and ferroelectric memory are less available as commercially available products. The use of eNVM for new forms of artificial intelligence hardware is a much more open field for future academic research. © The Author(s) 2024.

引用

页码：1099 / 1112

共 50 条

[1] Emerging non-volatile memory technologies
Müller, G
Nagel, N
Pinnowa, CU
Röhr, T
[J]. ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 37 - 44
[2] Emerging Non-volatile Memory Technologies for Reconfigurable Architectures
Ou, Elaine
Leong, Philip
[J]. 2011 IEEE 54TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2011,
[3] OVERVIEW OF RADIATION EFFECTS ON EMERGING NON-VOLATILE MEMORY TECHNOLOGIES
Fetahovic, Irfan S.
Dolicanin, Edin C.
Lazarevic, Djordje R.
Loncar, Boris B.
[J]. NUCLEAR TECHNOLOGY & RADIATION PROTECTION, 2017, 32 (04): : 381 - 392
[4] A review of emerging non-volatile memory (NVM) technologies and applications
Chen, An
[J]. SOLID-STATE ELECTRONICS, 2016, 125 : 25 - 38
[5] Non-volatile memory technologies: emerging concepts and new materials
Bez, R
Pirovano, A
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2004, 7 (4-6) : 349 - 355
[6] Emerging Non-Volatile Memory Technologies Exploration Flow For Processor Architecture
Senni, Sophiane
Torres, Lionel
Sassatelli, Gilles
Gamatie, Abdoulaye
Mussard, Bruno
[J]. 2015 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI, 2015, : 460 - U909
[7] Non-Volatile memory (NVM) technologies
Shao, Zili
Chang, Yuan-Hao
[J]. JOURNAL OF SYSTEMS ARCHITECTURE, 2016, 71 : 1 - 1
[8] Embedded Non-Volatile Memory Technologies
Shum, Danny
[J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011), 2011, 34 (01): : 3 - 8
[9] Introduction to non-volatile memory technologies
Asadinia, Marjan
Sarbazi-Azad, Hamid
[J]. DURABLE PHASE-CHANGE MEMORY ARCHITECTURES, 2020, 118 : 1 - 13
[10] Emerging Non-Volatile Memory Technologies: From Materials, to Device, Circuit, and Architecture
Li, Hai
Chen, Yiran
[J]. 53RD IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, 2010, : 1 - 4

← 1 2 3 4 5 →