Soft x-ray microscopy and EUV lithography: Imaging in the 20-40 nm regime

被引：0

作者：

Attwood, D ^{[1
]}

Anderson, E ^{[1
]}

Chao, W ^{[1
]}

Denbeaux, G ^{[1
]}

Fischer, P ^{[1
]}

Goldberg, K ^{[1
]}

Liddle, JA ^{[1
]}

Naulleau, P ^{[1
]}

Schneider, G ^{[1
]}

Goldsmith, J ^{[1
]}

Kubiak, G ^{[1
]}

Taylor, J ^{[1
]}

Sweeney, D ^{[1
]}

机构：

[1] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

来源：

2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Soft x-ray microscopy for the physical and life sciences,at wavelengths from 0.6 to 4 nm, and resolved to 20 nm, and EUV lithography at 13.5 nm wavelength, with printed features-to 39 nm, are reviewed.

引用

页码：158 / 159

页数：2

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