Soft x-ray microscopy and EUV lithography: Imaging in the 20-40 nm regime

被引:0
|
作者
Attwood, D [1 ]
Anderson, E [1 ]
Chao, W [1 ]
Denbeaux, G [1 ]
Fischer, P [1 ]
Goldberg, K [1 ]
Liddle, JA [1 ]
Naulleau, P [1 ]
Schneider, G [1 ]
Goldsmith, J [1 ]
Kubiak, G [1 ]
Taylor, J [1 ]
Sweeney, D [1 ]
机构
[1] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA
关键词
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暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Soft x-ray microscopy for the physical and life sciences,at wavelengths from 0.6 to 4 nm, and resolved to 20 nm, and EUV lithography at 13.5 nm wavelength, with printed features-to 39 nm, are reviewed.
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页码:158 / 159
页数:2
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