Leakage current property of Pb(Zr0.4,Ti0.6)O3 thin-film capacitors with highly rectangular hysteresis property

被引:0
|
作者
Okamura, Soichiro [1 ]
Tanimura, Mitsumasa [1 ]
Shima, Hiromi [1 ]
Naganuma, Hiroshi [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
关键词
D O I
10.1109/ISAF.2007.4393176
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Pb(Zr(0.4),Ti(0.6))O(3) thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.
引用
收藏
页码:91 / 93
页数:3
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