Leakage current property of Pb(Zr0.4,Ti0.6)O3 thin-film capacitors with highly rectangular hysteresis property

被引:0
|
作者
Okamura, Soichiro [1 ]
Tanimura, Mitsumasa [1 ]
Shima, Hiromi [1 ]
Naganuma, Hiroshi [1 ]
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Fac Sci, Shinjuku Ku, Tokyo 1628601, Japan
关键词
D O I
10.1109/ISAF.2007.4393176
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Pb(Zr(0.4),Ti(0.6))O(3) thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.
引用
收藏
页码:91 / 93
页数:3
相关论文
共 50 条
  • [21] Effective orientation control of Pb(Zr0.4Ti0.6)O3 thin films using a new Ti/Pb(Zr0.4Ti0.6)O3 seeding layer
    Moon, BK
    Arisumi, O
    Hornik, K
    Bruchhaus, R
    Itokawa, H
    Hilliger, A
    Zhuang, H
    Egger, U
    Nakazawa, K
    Yamazaki, S
    Ozaki, T
    Nagel, N
    Kunishima, I
    Yamakawa, K
    Beitel, G
    FERROELECTRIC THIN FILMS XII, 2004, 784 : 177 - 188
  • [22] DEPOLARIZATION CHARACTERISTICS IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS
    MIHARA, T
    YOSHIMORI, H
    WATANABE, H
    DEARAUJO, CAP
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2380 - 2388
  • [23] ORIGIN OF DEPOLARIZATION IN SOL-GEL FERROELECTRIC PB(ZR0.4TI0.6)O-3 THIN-FILM CAPACITORS
    MIHARA, T
    YOSHIMORI, H
    WATANABE, H
    DEARAUJO, CAP
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (12A): : L1703 - L1706
  • [24] Asymmetry in the voltage shift in Pt/Pb(Zr,Ti)O3/Pt thin-film capacitors
    Lee, EG
    Kim, KS
    Lee, JK
    Jang, WY
    Lee, JG
    Kim, SJ
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 (01) : 158 - 161
  • [25] Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature
    Dan Xie
    YongYuan Zang
    YaFeng Luo
    TianLing Ren
    LiTian Liu
    ZhiMin Dang
    Science in China Series E: Technological Sciences, 2009, 52 : 10 - 14
  • [26] Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature
    XIE Dan1
    2 College of Material Science and Engineering
    Science in China(Series E:Technological Sciences), 2009, (01) : 10 - 14
  • [27] Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr0.4Ti0.6)O3 multilayer capacitor at room temperature
    Xie Dan
    Zang YongYuan
    Luo YaFeng
    Ren TianLing
    Liu LiTian
    Dang ZhiMin
    SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2009, 52 (01): : 10 - 14
  • [28] SiO2/SiN Multilayer-Stack Infrared Absorber Integrated on Pb(Zr0.4,Ti0.6)O3 Film Pyroelectric Sensors on γ-Al2O3/Si Substrate
    Oishi, Koji
    Yonemaru, Shota
    Akai, Daisuke
    Ishida, Makoto
    SENSORS AND MATERIALS, 2015, 27 (02) : 217 - 227
  • [29] Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors
    Wu, Aiying
    Vilarinho, Paula M.
    Wu, Dong
    Gruverman, Alexei
    APPLIED PHYSICS LETTERS, 2008, 93 (26)
  • [30] Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors
    Nguyen, M. D.
    Steenwelle, R. J. A.
    te Riele, P. M.
    Dekkers, J. M.
    Blank, D. H. A.
    Rijnders, G.
    2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, : 649 - 652