Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

被引：8

作者：

Shi, R. P. ^{[1
]}

Huang, X. D. ^{[2
]}

Sin, Johnny K. O. ^{[3
]}

Lai, P. T. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China

[2] Southeast Univ, Key Lab MEMS, Minist Educ, Nanjing 210096, Jiangsu, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2016年 / 65卷

关键词：

Nonvolatile memory; Charge trapping; High-k dielectric; Nb-doped Ga2O3;

D O I：

10.1016/j.microrel.2016.07.148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge-trapping properties of Nb-doped Ga2O3 are investigated by using an Al/Al2O3/GaNbO/SiO2/Si structure. Compared with the memory capacitor with pure Ga2O3, the one with lightly Nb-doped Ga2O3 shows better charge-trapping characteristics, including larger memory window (5.5 V at +/-6 V sweeping voltage), higher programming and erasing speeds due to its higher trapping efficiency resulted from increased trap density induced by the Nb doping. The sample with heavily Nb-doped Ga2O3 also shows improvements compared with the one with pure Ga2O3, but not as large as those for the lightly Nb-doped sample due to defects generated by excessive Nb doping. Erase saturation phenomenon is observed in all the samples, and can be suppressed by hole traps created by the Nb doping. (C) 2016 Published by Elseitier Ltd.

引用

页码：64 / 68

页数：5

共 50 条

[31] Charge-trapping characteristics of fluorinated thin ZrO2 film for nonvolatile memory applications
Huang, X. D.
Shi, R. P.
Lai, P. T.
APPLIED PHYSICS LETTERS, 2014, 104 (16)
[32] Nitrided GdTiO as Charge-Trapping Layer for Flash Memory Applications
Tao, Qing-Bo
Lai, P. T.
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 927 - 929
[33] Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications
Wenchao Xu
Yang Zhang
Zhenjie Tang
Zhengjie Shao
Guofu Zhou
Minghui Qin
Min Zeng
Sujuan Wu
Zhang Zhang
Jinwei Gao
Xubing Lu
Junming Liu
Nanoscale Research Letters, 2017, 12
[34] Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications
Xu, Wenchao
Zhang, Yang
Tang, Zhenjie
Shao, Zhengjie
Zhou, Guofu
Qin, Minghui
Zeng, Min
Wu, Sujuan
Zhang, Zhang
Gao, Jinwei
Lu, Xubing
Liu, Junming
NANOSCALE RESEARCH LETTERS, 2017, 12
[35] Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y2O3 films
Huang, X. D.
Liu, L.
Xu, J. P.
Lai, P. T.
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[36] Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
Tsai, C. Y.
Lee, T. H.
Cheng, C. H.
Chin, Albert
Wang, Hong
APPLIED PHYSICS LETTERS, 2010, 97 (21)
[37] Effect of Thermal Annealing on Nonvolatile Memory Structures Containing a High-k La2O3 Charge-trapping Layer
Kim, Dong Hak
Park, Joon Won
Kim, Chang Oh
Chung, Haeyang
Choi, Suk-Ho
Lim, D.
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2011, 58 (02) : 264 - 269
[38] Effect of annealing atmosphere on the structural and optical properties of the Nb-doped -Ga2O3 films
Zhang, Hao
Deng, Jin-Xiang
Kong, Le
Pan, Zhiwei
Bai, Zhiying
Wang, Jiyou
MICRO & NANO LETTERS, 2019, 14 (01) : 62 - 65
[39] Conduction mechanism and shallow donor defects in Nb-doped β-Ga2O3 single crystals
Sai, Qinglin
Cui, Huiyuan
Xia, Changtai
Qi, Hongji
Pan, Mingyan
Ahmed, A. M.
Mohamed, H. F.
AIP ADVANCES, 2024, 14 (04)
[40] Effect of Au nanoparticles on the optical and electrical properties of Nb-doped β-Ga2O3 film
Zhang, Hao
Deng, Jinxiang
Duan, Ping
Li, Ruidong
Pan, Zhiwei
Bai, Zhiying
Kong, Le
Wang, Jiyou
VACUUM, 2018, 155 : 465 - 469

← 1 2 3 4 5 →